IndiumV3, Main, Repository, bibRecord, 00E637

Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP

Identifieur interne : 00E637 ( Main/Repository ); précédent : 00E636; suivant : 00E638

Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP

Auteurs : RBID : Pascal:02-0054383

Descripteurs français

Pascal (Inist)
- 8115F, 6855A, 7755, 8530T, Etude expérimentale, Cérium composé, Couche épitaxique, Dépôt laser pulsé, Couche mince diélectrique, Transistor MOSFET, Nucléation, Diffraction RX, Hydrogène, Indium composé, Epitaxie phase vapeur.
Wicri :
- concept : Hydrogène.

English descriptors

KwdEn :
- Cerium compounds, Dielectric thin films, Epitaxial layers, Experimental study, Hydrogen, Indium compounds, MOSFET, Nucleation, Pulsed laser deposition, VPE, XRD.

Abstract

We report on the growth of epitaxial CeO₂ on (001) InP using hydrogen-assisted pulsed-laser deposition. Epitaxy is achieved via laser ablation of a CeO₂ target in the presence of molecular hydrogen that is introduced during nucleation to reduce native In₂O₃ from the InP surface. X-ray diffraction scans confirm a cube-on-cube epitaxial relationship between the oxide film and the InP substrate. Rapid heating to the deposition temperature proved important in avoiding significant decomposition of the InP surface prior to film growth. This result should enable the integration of electronic oxide functionality with InP-based semiconductor technologies, and provide a means to explore InP metal-oxide-semiconductor field-effect transistor structures. © 2002 American Institute of Physics.

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Pascal:02-0054383

Le document en format XML

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<author><name sortKey="Norton, D P" uniqKey="Norton D">D. P. Norton</name>
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<author><name sortKey="Pearton, S J" uniqKey="Pearton S">S. J. Pearton</name>
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<author><name sortKey="Christen, H M" uniqKey="Christen H">H. M. Christen</name>
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<country xml:lang="fr">États-Unis</country>
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<author><name sortKey="Budai, J D" uniqKey="Budai J">J. D. Budai</name>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Oak Ridge National Laboratory, Solid State Division, P. O. Box 2008, Oak Ridge, Tennessee 37831</s1>
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<term>Indium compounds</term>
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<front><div type="abstract" xml:lang="en">We report on the growth of epitaxial CeO<sub>2</sub>
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 target in the presence of molecular hydrogen that is introduced during nucleation to reduce native In<sub>2</sub>
O<sub>3</sub>
 from the InP surface. X-ray diffraction scans confirm a cube-on-cube epitaxial relationship between the oxide film and the InP substrate. Rapid heating to the deposition temperature proved important in avoiding significant decomposition of the InP surface prior to film growth. This result should enable the integration of electronic oxide functionality with InP-based semiconductor technologies, and provide a means to explore InP metal-oxide-semiconductor field-effect transistor structures. © 2002 American Institute of Physics.</div>
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O<sub>3</sub>
 from the InP surface. X-ray diffraction scans confirm a cube-on-cube epitaxial relationship between the oxide film and the InP substrate. Rapid heating to the deposition temperature proved important in avoiding significant decomposition of the InP surface prior to film growth. This result should enable the integration of electronic oxide functionality with InP-based semiconductor technologies, and provide a means to explore InP metal-oxide-semiconductor field-effect transistor structures. © 2002 American Institute of Physics.</s0>
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Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP

Hydrogen-assisted pulsed-laser deposition of epitaxial CeO2 films on (001)InP

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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